型号:

IXTA06N120P

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 1200V 0.6A TO-263
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXTA06N120P PDF
标准包装 50
系列 PolarVHV™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 1200V(1.2kV)
电流 - 连续漏极(Id) @ 25° C 600mA
开态Rds(最大)@ Id, Vgs @ 25° C 32 毫欧 @ 300mA,10V
Id 时的 Vgs(th)(最大) 4.5V @ 50µA
闸电荷(Qg) @ Vgs 13.3nC @ 10V
输入电容 (Ciss) @ Vds 270pF @ 25V
功率 - 最大 42W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 TO-263
包装 管件
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